Qhov zoo ntawm Insulated Gate Bipolar Transistor (IGBT)

Core Zoo
High Input Impedance: Zoo ib yam li MOSFETs, IGBTs yog qhov hluav taws xob- tsav tsheb, nrog lub rooj vag siv yuav luag tsis muaj tam sim no, ua rau kev tsav tsheb yooj yim thiab qis - lub zog.

Tsawg Tsav Tsav Tsheb: Tsuas yog milliwatt- theem tsav tsheb yuav tsum muaj, qis dua li BJTs ib txwm muaj, ua rau lub zog- tsim tau zoo.

Txo Cov Hluav Taws Xob Hluav Taws Xob: Siv cov txiaj ntsig kev hloov pauv hloov pauv, ntawm - lub xeev qhov hluav taws xob saturation (VCE(sat)) tsuas yog 1-3V, qis dua MOSFETs ntawm tib qhov ntsuas hluav taws xob, yog li txo qis kev ua haujlwm.

High Switching Speed: Kev khiav hauj lwm zaus tuaj yeem ncav cuag 1-20 kHz, haum rau siab - zaus inverters, tsav tsav, thiab lwm yam xwm txheej.

Lub Zog Muaj Peev Xwm Loj: Ib qho qauv tuaj yeem txhawb nqa mus txog 6500V / 600A, haum rau siab -voltage, siab- cov ntawv thov tam sim no xws li tsheb tshiab, tsheb ciav hlau, thiab kev tsav tsheb ntau zaus.

Compact Structure thiab High Reliability: Modular ntim (xws li kev koom ua ke nrog cov diodes ceev ceev, FWD) pab txhawb kev sib koom ua ke thiab txhim kho kev ruaj ntseg tag nrho.