Txhais ntawm Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor (IGBT) yog ib qho kev tswj xyuas tag nrho, qhov hluav taws xob -tsav hluav taws xob semiconductor ntaus ntawv uas sib txuas qhov zoo ntawm MOSFET (Hlau-Oxide-Semiconductor Field-Effect Transistor) thiab BJT (Bipolar Junction).

 

Cov ntsiab lus tseem ceeb
Structure Composition: Ua los ntawm cov input siab impedance thiab voltage-tsav cov yam ntxwv ntawm ib tug MOSFET ua ke nrog rau qhov tsawg conduction voltage poob thiab siab tam sim no nqa peev xwm ntawm ib tug BJT.

Txoj Cai Ua Haujlwm: Los ntawm kev siv qhov hluav taws xob rau lub rooj vag los tswj kev tsim cov channel, nws muab lub hauv paus tam sim no rau PNP transistor, ua tiav tig -rau lossis tig -tawm.

Terminal Structure: Nws muaj peb lub terminals -Gate (G), Collector (C), thiab Emitter (E).

 

Lub ntsiab zoo:
High input impedance (xws li MOSFET, lub zog tsav qis)
Tsawg conduction voltage poob (xws li BJT, qis conduction poob)
Haum rau high voltage, high tam sim no, thiab nruab nrab - high zaus daim ntawv thov