Txoj Cai Ua Haujlwm ntawm Insulated Gate Bipolar Transistor (IGBT)

Insulated Gate Bipolar Transistor (IGBT) yog qhov sib xyaw ua ke tag nrho - tswj qhov hluav taws xob -tsav hluav taws xob semiconductor ntaus ntawv uas sib txuas cov khoom siv hluav taws xob siab ntawm MOSFETs nrog qhov qis conduction voltage poob ntawm GTRs.

 

Core Structure thiab Tsav Mechanism
Peb -terminal composite structure: Lub IGBT muaj lub rooj vag, collector, thiab emitter, sab hauv sib npaug rau MOSFET tsav tsheb bipolar transistor (PNP).

Voltage-tswj yam ntxwv: Raws li ib qho hluav taws xob- tswj cov cuab yeej, lub rooj vag tsav tsheb tau pom zoo yog 15V ± 1.5V, nrog cov tswv yim siab impedance thiab tsis muaj zog tsav.

 

Tig-rau thiab Tig-tawm Mechanism
Tig- ntawm cov txheej txheem: Thaum lub zog rau pem hauv ntej tshaj qhov pib siv nruab nrab ntawm lub rooj vag thiab cov emitter, ib channel yog tsim nyob rau hauv MOSFET, muab lub hauv paus tam sim no rau PNP transistor thiab tig rau IGBT. Nyob rau lub sijhawm no, cov nyhuv conductivity modulation yog siv; qhov raug txhaj rau hauv cheeb tsam N kom txo qhov kev tiv thaiv, ua tiav qhov qis ntawm - lub xeev qhov hluav taws xob poob.

Tig-tawm txheej txheem: Thaum qhov hluav taws xob rov qab siv rau lub rooj vag lossis lub teeb liab raug tshem tawm, MOSFET channel ploj mus, lub hauv paus tam sim no raug txiav tawm, thiab IGBT kaw. Thaum lub sijhawm tig-tawm, muaj qhov tshwm sim tam sim no uas yuav tsum tau ua kom zoo tshaj plaws los txo qhov poob.

 

Cov yam ntxwv tseem ceeb thiab kev siv
Cov yam ntxwv hluav taws xob: Haum rau cov cheeb tsam uas muaj qhov hluav taws xob tiv taus tshaj 600V, tam sim no tshaj 10A, thiab zaus tshaj 1kHz, sib txuas ua haujlwm siab - nrawm nrog kev ua haujlwm qis.

Daim ntawv thov teb: Feem ntau yog siv nyob rau hauv photovoltaic inverters, tshiab lub zog tsheb hluav taws xob tswj tshuab, muaj zaus hloov khoom siv, thiab induction cua sov.