Insulated Gate Bipolar Transistor Siv Cov Lus Qhia
Mar 17, 2026
Tso lus
Insulated Gate Bipolar Transistor (IGBT) yog qhov hluav taws xob - tswj kev hloov khoom siv dav siv hauv nruab nrab - mus rau siab - lub zog hluav taws xob hluav taws xob, sib txuas qhov zoo ntawm MOSFETs 'siab input impedance thiab tsav yooj yim nrog BJTs 'low conduction voltage poob thiab siab tam sim no{{3}.
Cov ntsiab lus siv yooj yim
Tsav tsheb Voltage Requirements
IGBTs yog voltage-tswj cov khoom siv. Ib qhov hluav taws xob ntawm +12V rau +18V (tus nqi raug) yuav tsum tau siv nruab nrab ntawm lub rooj vag thiab emitter kom tig rau; rau tig-tawm, 0V lossis tsis zoo voltage (xws li -5V rau -15V) tuaj yeem siv los txhim kho kev cuam tshuam kev cuam tshuam thiab ua kom ceev tig tawm.
Lub rooj vag tsav voltage yuav tsum tsis pub tshaj ± 20V, txwv tsis pub lub rooj vag oxide txheej yuav raug puas.
Tam sim no thiab Voltage Rating Xaiv
IGBTs tuaj yeem ua haujlwm tam sim no ntawm ntau pua amperes (piv txwv li, tshaj 500A) thiab qhov hluav taws xob ntawm ntau txhiab volts. Thaum xaiv, cov npoo ntawm 20% ~ 30% yuav tsum tau sab laug kom tsis txhob overvoltage lossis overcurrent puas.
Xa kev nug