Cov yam ntxwv tseem ceeb ntawm Insulated Gate Bipolar Transistor (IGBT)

Cov yam ntxwv tseem ceeb ntawm hluav taws xob

High Input Impedance: Inherits tus yam ntxwv ntawm MOSFET, yuav tsum tsis tshua muaj zog tsav, thiab muaj ib tug yooj yim tsav Circuit Court.

 

Low Conduction Voltage Drop: Siv cov nyhuv conductivity hloov; qhov ntawm -state saturation voltage (Vce(sat)) qis dua li ntawm MOSFETs nrog tib qhov ntsuas voltage, feem ntau yog 1.5 ~ 3V.

 

High Voltage thiab Loj Tam Sim No Muaj Peev Xwm: Tsim nyog rau qib voltage ntawm 600V txog 6500V, nrog tam sim no ncav cuag tshaj 10A txog 1800A.

 

Nruab Nrab Hloov Zaus: Kev ua haujlwm ntau zaus yog feem ntau kaum ntawm kHz (xws li 10-100kHz), siab dua BJT tab sis qis dua MOSFET.

 

Zoo Kub Coefficient: Raws li qhov ntsuas tam sim no, Vce (sat) me ntsis nce nrog qhov kub thiab txias, uas yog qhov zoo rau kev sib koom tam sim no thaum siv tib yam.